4.8 Article

Metal-Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer

Journal

ADVANCED MATERIALS
Volume 29, Issue 4, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201603991

Keywords

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Funding

  1. National Research Foundation Singapore under NRF RF [NRF-RF2013-08]
  2. Ministry of Education, Singapore [MOE2011-T2-2-147, MOE2011-T3-1-005, MOE2015-T2-2-007]
  3. CoE Industry Collaboration Grant (WINTECH-NTU-LIU)
  4. JST Research Acceleration Program
  5. Singapore National Research Foundation under NRF [NRF-NRFF2013-03]

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A metal-semi conductor phase transition in a ternary transition metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe2 (WSe2(1-x)Te2x, where x = 0%-100%). The optical bandgaps of the WSe2(1-x) Te2x monolayer can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops to 0 eV (1Td metal), which opens up an exciting opportunity in functional electronic/optoelectronic devices.

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