4.8 Article

Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk

Journal

ADVANCED MATERIALS
Volume 29, Issue 3, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201604185

Keywords

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Funding

  1. Austrian Science Funds [SFB 025-IRON]
  2. EU CALIPSO Program [312284]
  3. Polish National Science Center [2013/11/B/ST3/03934, 2014/15/B/ST3/03833]
  4. Deutsche Forschingsgemeinschaft [SPP 1666]
  5. Impuls-und Vernetzungsfonds der Helmholtz-Gemeinschaft [HRJRG-408]

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The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1-xSnxTe (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.

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