Journal
ADVANCED MATERIALS
Volume 28, Issue 30, Pages 6386-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201600919
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Funding
- National Natural Science Foundation of China
- Ministry of Science and Technology of China
- U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]
- FAME Center, one of six centers of STARnet, a Semiconductor Research Corporation program - MARCO
- DARPA
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The evolution of the quantum anomalous Hall effect with the thickness of Cr-doped (Bi,Sb)(2)Te-3 magnetic topological insulator films is studied, revealing how the effect is caused by the interplay of the surface states, band-bending, and ferromagnetic exchange energy. Homogeneity in ferromagnetism is found to be the key to high-temperature quantum anomalous Hall material.
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