Journal
ADVANCED MATERIALS
Volume 28, Issue 42, Pages 9326-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201602391
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Funding
- [IBS-R006-D1]
- Ministry of Science, ICT & Future Planning, Republic of Korea [IBS-R006-D1-2016-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2015H1A2A1034098] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Large-scale colloidal synthesis and integration of uniform-sized molybdenum disulfi de (MoS2) nanosheets for a fl exible resistive random access memory (RRAM) array are presented. RRAM using MoS2 nano sheets shows a approximate to 10 000 times higher on/off ratio than that based on exfoliated MoS2. The good uniformity of the MoS2 nanosheets allows wafer-scale system integration of the RRAM array with pressure sensors and quantum-dot light-emitting diodes.
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