Oxidative-Etching-Assisted Synthesis of Centimeter-Sized Single-Crystalline Graphene

Centimeter-sized single-crystalline graphene is obtained by an oxidative-etching-assisted chemical vapor deposition (CVD) method. Gaseous oxidants are found to be highly responsible for graphene etching. By diminishing the uncertain amount of H2O vapor in commercial H-2 and precisely introducing additional O-2, the graphene nucleation density can be well controlled.