Journal
ADVANCED MATERIALS
Volume 28, Issue 26, Pages 5293-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201506004
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Funding
- National Research Foundation (NRF) - Ministry of Science, ICT and Future Planning of Korea [2015R1A2A2A01002965, 2013M3A6B1078881]
- National Research Foundation of Korea [10Z20130011056, 2015R1A2A2A01002965, 2013M3A6B1078882] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A WSe2-based vertical graphene-transition metal dichalcogenide heterojunction barristor shows an unprecedented on-current increase with decreasing temperature and an extremely high on/off-current ratio of 5 x 10(7) at 180 K (3 x 10(4) at room temperature). These features originate from a trap-assisted tunneling process involving WSe2 defect states aligned near the graphene Dirac point.
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