4.8 Article

Monolithic 3D CMOS Using Layered Semiconductors

Journal

ADVANCED MATERIALS
Volume 28, Issue 13, Pages 2547-+

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201505113

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Funding

  1. Applied Materials, Inc.
  2. Entegris, Inc. under the I-RiCE Program
  3. Office of Science, Office of Basic Energy Sciences, and Materials Sciences and Engineering Division of the U.S. Department of Energy [DE-AC02-05Ch11231]

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Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications.

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