4.8 Article

Ultrafast Response p-Si/n-ZnO Heterojunction Ultraviolet Detector Based on Pyro-Phototronic Effect

Journal

ADVANCED MATERIALS
Volume 28, Issue 32, Pages 6880-+

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201600884

Keywords

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Funding

  1. U.S. Department of Energy, Office of Basic Energy Sciences [DE-FG02-07ER46394]
  2. National Science Foundation [DMR-1505319]
  3. National Natural Science Foundation of China [51432005, 11574033, 11104016]
  4. thousands talents program for pioneer researcher and his innovation team
  5. Beijing Higher Education Young Elite Teacher Project
  6. Fundamental Research Funds for the Central Universities [2015KJJCB02]
  7. Division Of Materials Research
  8. Direct For Mathematical & Physical Scien [1505319] Funding Source: National Science Foundation

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A light-self-induced pyro-phototronic effect in wurtzite ZnO nanowires is proposed as an effective approach to achieve ultrafast response ultraviolet sensing in p-Si/n-ZnO heterostructures. The relatively long response/recovery time of zinc-oxide-based ultraviolet sensors in air/vacuum has long been an obstacle to developing such detectors for practical applications. The response/recovery time and photoresponsivity are greatly improved by the pyro-phototronic effect.

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