Journal
ADVANCED MATERIALS
Volume 28, Issue 25, Pages 4983-4990Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201600062
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Funding
- National Research Foundation, Prime Minister's Office, Singapore under its Competitive Research Programme (CRP) [NRF-CRP12-2013-01]
- National Creative Research Laboratory through the National Research Foundation of Korea (NRF) [2015R1A3A2066337]
- Yonsei University Future-leading Research Initiative
- SSLS via NUS [C-380-003-003-001]
- A*STAR Computational Resource Centre (A*CRC)
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Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of approximate to 300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components.
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