Journal
ADVANCED MATERIALS
Volume 28, Issue 24, Pages 4912-4919Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201506140
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Funding
- Innovation Platform of Micro/Nano Devices and Integration System at Zhejiang University
- National Basic Research Program of China [2013CB632101]
- NSFC Program for Excellent Young Researchers [61222404]
- NSFC [61474097, 61274123, 61474099]
- ZJ-NSFC grant [LR12F04001]
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Graphene is coupled with silicon quantum dots (Si QDs) on top of bulk Si to form a hybrid photodetector. Si QDs cause an increase of the built-in potential of the graphene/Si Schottky junction while reducing the optical reflection of the photodetector. Both the electrical and optical contributions of Si QDs enable a superior performance of the photodetector.
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