Anisotropic magnetic entropy change in Cr2X2Te6 (X = Si and Ge)

Intrinsic, two-dimensional (2D) ferromagnetic semiconductors are an important class of materials for spintronics applications. Cr2X2Te6 (X = Si and Ge) semiconductors show 2D Ising-like ferromagnetism, which is preserved in few-layer devices. The maximum magnetic entropy change associated with the critical properties around the ferromagnetic transition for Cr2Si2Te6 - Delta S-M(max) similar to 5.05 J kg(-1) K-1 is much larger than - Delta S-M(max) similar to 2.64 J kg(-1) K-1 for Cr2Ge2Te6 with an out-of-plane field change of 5 T. The rescaled - Delta S-M (T, H) curves collapse onto a universal curve independent of temperature and field for both materials. This indicates similar critical behavior and 2D Ising magnetism, confirming the magnetocrystalline anisotropy that could preserve the long-range ferromagnetism in a few layers of Cr2X2Te6.