Journal
ADVANCED MATERIALS
Volume 28, Issue 25, Pages 5126-5132Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201600278
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Funding
- FAME, STARnet
- Semiconductor Research Corporation program - MARCO
- DARPA
- China Scholarship Council
- Fundamental Research Funds for the Central Universities in China [lzujbky-2015-303]
- U.S. Department of Energy, Office of Science, Basic Energy Science, Materials Sciences and Engineering Division
- ORNL's Center for Nanophase Materials Sciences (CNMS), DOE Office of Science User Facility
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A new concept for junction fabrication by connecting multiple regions with varying layer thicknesses, based on the thickness dependence, is demonstrated. This type of junction is only possible in super-thin-layered 2D materials, and exhibits similar characteristics as p-n junctions. Rectification and photovoltaic effects are observed in chemically homogeneous MoSe2 junctions between domains of different thicknesses.
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