Journal
ADVANCED MATERIALS
Volume 28, Issue 45, Pages 10095-10102Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201602873
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Funding
- Center for Flexible Electronics at Penn State
- Dow Chemical Company
- National Science Foundation [DMR-1112455]
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A novel photopatternable high-k fluoropolymer, poly(vinylidene fluoride-bromotrifluoroethylene) P(VDF-BTFE), with a dielectric constant (k) between 8 and 11 is demonstrated in thin-film transistors. Crosslinking P(VDF-BTFE) reduces energetic disorder at the dielectric-semiconductor interface by controlling the chain conformations of P(VDF-BTFE), thereby leading to approximately a threefold enhancement in the charge mobility of rubrene single-crystal field-effect transistors.
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