Journal
ADVANCED MATERIALS
Volume 28, Issue 31, Pages 6568-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201506151
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Funding
- Ministry of Education, Culture, Sport, Science, and Technology of Japan [90443035, 15K21617]
- New Energy and Industrial Technology Development Organization (NEDO), Japan [11B11016d]
- Grants-in-Aid for Scientific Research [15K21617, 26286040] Funding Source: KAKEN
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A spontaneous patterning technique via parallel vacuum ultraviolet is developed for fabricating large-scale, complex electronic circuits with 1 mu m resolution. The prepared organic thin-film transistors exhibit a low contact resistance of 1.5 k Omega cm, and high mobilities of 0.3 and 1.5 cm(2) V-1 s(-1) in low-operating-voltage devices with channel lengths of 1 and 5 mu m, respectively.
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