Journal
ADVANCED MATERIALS
Volume 28, Issue 30, Pages 6491-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201601553
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Funding
- NSERC of Canada
- Canadian Foundation for Innovation
- DuPont
- A. P. Sloan Foundation
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Intrinsic traps in organic semiconductors can be eliminated by trap-filling with F4-TCNQ. Photovoltaic tests show that devices with F4-TCNQ at parts per thousand concentration outperform control devices due to an improved fill factor. Further studies confirm the trap-filling pathway and demonstrate the general nature of this finding.
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