Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 26, Issue 23, Pages 4223-4230Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201600292
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Funding
- Research Grant Council of Hong Kong [PolyU 252001/14E]
- National Natural Science Foundation of China [61302045]
- Hong Kong Polytechnic University [G-UC72]
- AOE grant [AOE/P-04/08-1]
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Control of the carrier type in 2D materials is critical for realizing complementary logic computation. Carrier type control in WSe2 field-effect transistors (FETs) is presented via thickness engineering and solid-state oxide doping, which are compatible with state-of-the-art integrated circuit (IC) processing. It is found that the carrier type of WSe2 FETs evolves with its thickness, namely, p-type (<4 nm), ambipolar (approximate to 6 nm), and n-type (> 15 nm). This layer-dependent carrier type can be understood as a result of drastic change of the band edge of WSe2 as a function of the thickness and their band offsets to the metal contacts. The strong carrier type tuning by solid-state oxide doping is also demonstrated, in which ambipolar characteristics of WSe 2 FETs are converted into pure p-type, and the field-effect hole mobility is enhanced by two orders of magnitude. The studies not only provide IC-compatible processing method to control the carrier type in 2D semiconductor, but also enable to build functional devices, such as, a tunable diode formed with an asymmetrical-thick WSe2 flake for fast photodetectors.
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