Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 26, Issue 31, Pages 5631-5640Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201600654
Keywords
block copolymer; molybdenum disulfide; plasma doping; self-assembly; transition metal dichalcogenide
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Funding
- Global Frontier Program through Global Frontier Hybrid Interface Materials (GFHIM) of the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [2013M3A6B1078874]
- Open Innovation Lab Project from National Nanofab Center (NNFC)
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Precise modulation of electrical and optical properties of 2D transition metal dichalcogenides (TMDs) is required for their application to high-performance devices. Although conventional plasma-based doping methods have provided excellent controllability and reproducibility for bulk or relatively thick TMDs, the application of plasma doping for ultrathin few-layer TMDs has been hindered by serious degradation of their properties. Herein, a reliable and universal doping route is reported for few-layer TMDs by employing surface-shielding nanostructures during a plasma-doping process. It is shown that the surface-protection oxidized polydimethylsiloxane nanostructures obtained from the sub-20 nm self-assembly of Si-containing block copolymers can preserve the integrity of 2D TMDs and maintain high mobility while affording extensive control over the doping level. For example, the self-assembled nanostructures form periodically arranged plasma-blocking and plasma-accepting nanoscale regions for realizing modulated plasma doping on few-layer MoS2, controlling the n-doping level of few-layer MoS2 from 1.9 x 10(11) cm(-2) to 8.1 x 10(11) cm(-2) via the local generation of extra sulfur vacancies without compromising the carrier mobility.
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