Journal
SCIENCE ADVANCES
Volume 4, Issue 11, Pages -Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.aau0059
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Funding
- Deutsche Forschungsgemeinschaft [SPP 1459]
- Impuls- und Vernetzungsfonds der Helmholtz-Gemeinschaft through a Helmholtz-Russia Joint Research Group [HRJRG-408]
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We propose a novel mechanism of flat band formation based on the relative biasing of only one sublattice against other sublattices in a honeycomb lattice bilayer. The mechanism allows modification of the band dispersion from parabolic to Mexican hat-like through the formation of a flattened band. The mechanism is well applicable for bilayer graphene-both doped and undoped. By angle-resolved photoemission from bilayer graphene on SiC, we demonstrate the possibility of realizing this extremely flattened band (< 2-meV dispersion), which extends two-dimensionally in a k-space area around the K point and results in a disk-like constant energy cut. We argue that our two-dimensional flat band model and the experimental results have the potential to contribute to achieving superconductivity of graphene- or graphite-based systems at elevated temperatures.
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