Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 26, Issue 29, Pages 5290-5296Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201600680
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Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2014R1A1A2054597]
- United Stated Department of Energy (DOE) [DEAC0494AL85000]
- National Research Foundation of Korea [2014R1A1A2054597] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (approximate to 85 ps for microdevices with waveguide) and relatively low switching current (approximate to 15 mu A for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. The motion of positively charged nitrogen vacancies is likely responsible for the observed switching.
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