Journal
SPIN
Volume 8, Issue 4, Pages -Publisher
WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S2010324718500182
Keywords
Spintronics; spin Hall angle; tungsten thin films; spin Hall effect
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Funding
- Ministry of Human Resource Development under the IMPRINT program [7519, 7058]
- Department of Electronics and Information Technology (DeitY)
- Department of Science and Technology under the Nanomission program [SR/NM/NT-1041/2016(G)]
- University Grant Commission, India
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We report on growth optimization and magnetodynamic properties of beta-W/Co20Fe60B20 system. We show that a relatively low growth rate of similar to 0.17 angstrom/s is essential for the stabilization of the beta-phase of tungsten. The low growth rate allows for the residual oxygen present in the chamber to get incorporated into the growing film, which helps in the stabilization of beta-phase tungsten as evidenced by X-ray diffraction and X-ray photoelectron spectroscopy. Using these optimized growth conditions, we achieved the beta phase in tungsten thin films up to a thickness of 60 nm. The ferromagnetic resonance measurements of beta-W/Co20Fe60B20 show a linear behavior of the Gilbert damping constant with the inverse of the thickness of the CoFeB layer, from which, we calculated spin mixing conductance to be (1.62 +/- 0.15) x 10(18)m(-2). Using the inverse spin Hall effect measurements, we obtained a large spin Hall angle of -0.44 +/- (0.04) in beta-W, which is achieved without using oxygen plasma during growth of tungsten.
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