Journal
PHOTONICS RESEARCH
Volume 7, Issue 2, Pages 144-148Publisher
OPTICAL SOC AMER
DOI: 10.1364/PRJ.7.000144
Keywords
-
Categories
Funding
- National Key R&D Program of China [2016YFB0400600, 2016YFB0400601, 2017YFB0403105]
- State Key Program of the National Science Foundation of China [61334001]
- National Natural Science Foundation of China (NSFC) [11364034, 11604137, 11674147, 21405076, 51602141, 61604066]
- National High Technology Research and Development Program of China [2011AA03A101, 2012AA041002]
Ask authors/readers for more resources
Realization of efficient yellow-light-emitting diodes (LEDs) has always been a challenge in solid-state lighting. Great effort has been made, but only slight advancements have occurred in the past few decades. After comprehensive work on InGaN-based yellow LEDs on Si substrate, we successfully made a breakthrough and pushed the wall-plug efficiency of 565-nm-yellow LEDs to 24.3% at 20 A/cm(2) and 33.7% at 3 A/cm(2). The success of yellow LEDs can be credited to the improved material quality and reduced compressive strain of InGaN quantum wells by a prestrained layer and substrate, as well as enhanced hole injection by a 3D pn junction with V-pits. (C) 2019 Chinese Laser Press
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
