Journal
CRYSTALS
Volume 9, Issue 1, Pages -Publisher
MDPI
DOI: 10.3390/cryst9010032
Keywords
dual radio frequency; inductive coupled plasma jet; single crystal diamond; chemical vapor deposition (CVD); methane flux; growth rate
Funding
- National Natural Science Foundation of China [50128790]
- Hundred program of Chinese Academy of Sciences, Hundred Talents Program of the Chinese Academy of Sciences, Scientific Research Equipment Project of the Chinese Academy of Sciences [yz201356]
- Hebei Science and Technology Plan [14291110D]
- Beijing Science and Technology Project [Z151100003315024]
Ask authors/readers for more resources
Single crystal diamonds were deposited on high pressure high temperature (HPHT) substrate with high growth rate, up to 18.5 m/h, by using dual radio-frequency inductive coupled plasma jet. The methane flux was found to influence the growth rate of single crystal diamond. The reason for this might be ascribed to the electron temperature increase, raising the flux of methane, based on the plasma diagnosis results by optical emission spectra (OES). The results of Raman spectroscopy and the X-ray rocking-curve indicated that as-deposited diamonds are of good quality.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
