Journal
CRYSTALS
Volume 9, Issue 1, Pages -Publisher
MDPI
DOI: 10.3390/cryst9010003
Keywords
HVPE; III-V semiconductors
Funding
- U.S. Department of Energy (DOE) [DE-AC36-08GO28308]
- Advanced Research Projects Agency (ARPA-E), US Department of Energy [15/CJ000/07/05]
- U.S. DOE Office of Energy Efficiency
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Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market.
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