Related references
Note: Only part of the references are listed.Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors
Yuewei Zhang et al.
APPLIED PHYSICS LETTERS (2018)
LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates
Subrina Rafique et al.
APPLIED PHYSICS LETTERS (2018)
Recent progress in the growth of β-Ga2O3 for power electronics applications
Michele Baldini et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)
n-type dopants in (001) beta-Ga2O3 grown on (001) beta-Ga2O3 substrates by plasma-assisted molecular beam epitaxy
Sang-Heon Han et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)
Defect phase diagram for doping of Ga2O3
Stephan Lany
APL MATERIALS (2018)
Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method
Zbigniew Galazka et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented Substrates
Michele Baldini et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Depletion-mode vertical Ga2O3 trench MOSFETs fabricated using Ga2O3 homoepitaxial films grown by halide vapor phase epitaxy
Kohei Sasaki et al.
APPLIED PHYSICS EXPRESS (2017)
Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition
Kevin D. Leedy et al.
APPLIED PHYSICS LETTERS (2017)
Demonstration of β-(AlxGa1-x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy
Elaheh Ahmadi et al.
APPLIED PHYSICS EXPRESS (2017)
High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
Neil A. Moser et al.
APPLIED PHYSICS LETTERS (2017)
Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain
Man Hoi Wong et al.
APPLIED PHYSICS EXPRESS (2017)
Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
Michele Baldini et al.
JOURNAL OF MATERIALS SCIENCE (2016)
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
Kelson D. Chabak et al.
APPLIED PHYSICS LETTERS (2016)
Intrinsic electron mobility limits in β-Ga2O3
Nan Ma et al.
APPLIED PHYSICS LETTERS (2016)
Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
Man Hoi Wong et al.
IEEE ELECTRON DEVICE LETTERS (2016)
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped β-Ga2O3 MOSFETs
Andrew J. Green et al.
IEEE ELECTRON DEVICE LETTERS (2016)
High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
Akito Kuramata et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Homo- and heteroepitaxial growth of Sn-doped β-Ga2O3 layers by MOVPE
D. Gogova et al.
CRYSTENGCOMM (2015)
Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD
Xuejian Du et al.
JOURNAL OF MATERIALS SCIENCE (2015)
On the bulk β-Ga2O3 single crystals grown by the Czochralski method
Zbigniew Galazka et al.
JOURNAL OF CRYSTAL GROWTH (2014)
Control of the conductivity of Si-doped beta-Ga2O3 thin films via growth temperature and pressure
Stefan Mueller et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2014)
Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts
Kohei Sasaki et al.
APPLIED PHYSICS EXPRESS (2013)
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2013)
Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
Kohei Sasaki et al.
APPLIED PHYSICS EXPRESS (2012)
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2012)
Mobility analysis of highly conducting thin films: Application to ZnO
D. C. Look et al.
APPLIED PHYSICS LETTERS (2010)
Czochralski growth and characterization of β-Ga2O3 single crystals
Z. Galazka et al.
CRYSTAL RESEARCH AND TECHNOLOGY (2010)
Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping
Encarnacion G. Villora et al.
APPLIED PHYSICS LETTERS (2008)
Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method
Hideo Aida et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2008)
Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor
K Matsuzaki et al.
THIN SOLID FILMS (2006)
Large-size β-Ga2O3 single crystals and wafers
EG Víllora et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Floating zone growth of β-Ga2O3:: A new window material for optoelectronic device applications
Y Tomm et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2001)