Intrinsically Stretchable Resistive Switching Memory Enabled by Combining a Liquid Metal-Based Soft Electrode and a Metal-Organic Framework Insulator

Mechanical flexibility and electrical reliability establish the fundamental criteria for wearable and implantable electronic devices. In order to receive intrinsically stretchable resistive switching memories, both the electrode and storage media should be flexible yet retain stable electrical properties. Experimental results and finite element analysis reveal that the formation of 3D liquid metal galinstan (GalnSn) calabash bunch conductive network in poly(dimethyl siloxane) (PDMS) matrix allows GaInSn (R) PDMS composite as soft electrode with the stable conductivity of >1.3 x 10(3) S cm(-1) at the stretching strains of >80% and a fracture strain extreme of 108.14%, while the third-generation metal-organic framework MIL-53 thin film with a facial rhombohedral topology enables large mechanical deformation up to a theoretical level of 17.7%. Combining the use of liquid metal-based electrode and MIL-53 switching layer, for the first time, intrinsically stretchable RRAM device Ag/MIL-53/GaInSn@PDMS is demonstrated that can exhibit reliable resistive switching characteristics at the strain level of 10%. The formation of fluidic gallium conductive filaments, together with the structural flexibility of the GalnSn@PDMS soft electrode and MIL-53 insulating layer, accounts for the uniform resistive switching under stretching deformation scenario.