Journal
ADVANCED ELECTRONIC MATERIALS
Volume 5, Issue 1, Pages -Publisher
WILEY
DOI: 10.1002/aelm.201800519
Keywords
composite layers; hybrid materials; memory devices; organic-inorganic hybrid perovskites; resistive switching memory
Funding
- National Research Foundation of Korea [2016M3D1A1027663, 2018R1D1A1B07043368]
- Brain Korea 21 PLUS project
- National Research Foundation of Korea [2018R1D1A1B07043368] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Increasing demands for information-storage capacity and for miniaturization of memory cells have driven exploration of new-generation data storage devices, because the conventional Si-based memory technology is approaching its fundamental physical limits. Hybrid materials and novel device structure may lead to a paradigm shift toward memory devices that have high density, multifunctionality, and low power consumption. Here, the structure and operation mechanism of resistive switching memory devices are described, then recent advances in hybrid materials (e.g., graphene-based polymer composites, organic-inorganic hybrid perovskite materials) for fabrication of these devices are summarized. How to increase the ON/OFF ratio and the density of memories, and to decrease programming voltage by selecting appropriate active materials, and engineering the active layers, are also demonstrated. Finally, the current challenges and future directions in memory devices based on hybrid materials are summarized.
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