Intrinsic Defect Engineering in Eu3+ Doped ZnWO4 for Annealing Temperature Tunable Photoluminescence

Eu3+ doped ZnWO4 phosphors were synthesized via the co-precipitation technique followed by subsequent thermal annealing in the range of 400-1000 degrees C. The phase, morphology, elemental composition, chemical states, optical absorption, and photoluminescence (PL) of the phosphors were characterized by X-ray diffraction, scanning electron microscopy, dispersive X-ray spectroscopy, X-ray photoelectron spectrometry, diffuse UV-vis reflectance spectroscopy, PL spectrophotometry, and PL lifetime spectroscopy, respectively. It is found that the PL from Eu3+ doped ZnWO4 is tunable through the control of the annealing temperature. Density functional calculations and optical absorption confirm that thermal annealing created intrinsic defects in ZnWO4 lattices play a pivotal role in the color tunable emissions of the Eu3+ doped ZnWO4 phosphors. These data have demonstrated that intrinsic defect engineering in ZnWO4 lattice is an alternative and effective strategy for tuning the emission color of Eu3+ doped ZnWO4. This work shows how to harness the intrinsic defects in ZnWO4 for the preparation of color tunable light-emitting phosphors.