Journal
NANOMATERIALS
Volume 9, Issue 1, Pages -Publisher
MDPI
DOI: 10.3390/nano9010066
Keywords
transparent conductive electrode; Ga2O3; AlGaN-based ultraviolet light-emitting diode; transmittance; sheet resistance
Categories
Funding
- Science and Technologies plan Projects of Guangdong Province [2017B010112003, 2017A050506013]
- Applied Technologies Research and Development Projects of Guangdong Province [2015B010127013, 2016B010123004]
- Science and Technologies plan Projects of Guangzhou City [201504291502518, 201604046021, 201704030139]
- Science and Technology Development Special Fund Projects of Zhongshan City [2017F2FC0002, 2017A1009]
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We fabricated a complex transparent conductive electrode (TCE) based on Ga2O3 for AlGaN-based ultraviolet light-emitting diodes. The complex TCE consists of a 10 nm ITO, a 15 nm Ga2O3, a 7 nm Ag, and a 15 nm Ga2O3, forming a ITO/Ga2O3/Ag/Ga2O3 multilayer. The metal layer embedded into Ga2O3 and the thin ITO contact layer improves current spreading and electrode contact properties. It is found that the ITO/Ga2O3/Ag/Ga2O3 multilayer can reach a 92.8% transmittance at 365 nm and a specific contact resistance of 10(-3) Omega.cm(2) with suitable annealing conditions.
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