High-Performance Flexible Self-Powered Photodetector Based on Perovskite and Low-Temperature Processed In2S3 Nanoflake Film

Flexible and self-powered perovskite photodetectors have attracted great attention due to their potential applications in the field of portable devices, sensing, and communication. Considering the physical principle of self-power and poor resistance to high temperature of flexible polymer substrates, it is challenging to develop low-temperature processed inorganic materials as carrier transfer layers to integrate with perovskite. Herein, a flexible self-powered perovskite photodetector on tin-doped indium oxide/polyethylene naphthalate substrate based on indium sulfide (In2S3) nanoflake film grown at a low temperature below 373 K is demonstrated. The device shows a detectivity up to 1.1 x 10(11) Jones at +0.5 V and response time less than 200 ms. A responsivity of 451 mA W-1 at 720 nm is also achieved, which is close to the performance of device on rigid fluorine-doped tin oxide substrate. The device exhibits outstanding stability without obvious performance degradation after 500 cycles of bending or under a 0.0025 m bending radius. Interestingly, the device can work in the outdoor to track the sunlight change for 1 day. This result opens a door to explore the integration of inorganic semiconductors with perovskite toward flexible self-powered photodetectors built on polymer substrates.