4.8 Article

Sn-C bonding riveted SnSe nanoplates vertically grown on nitrogen-doped carbon nanobelts for high-performance sodium-ion battery anodes

Journal

NANO ENERGY
Volume 54, Issue -, Pages 322-330

Publisher

ELSEVIER
DOI: 10.1016/j.nanoen.2018.10.019

Keywords

Tin selenide; Sn-C bonding; Cation exchange; Vertical growth; Sodium-ion batteries

Funding

  1. National Natural Science Foundation of China [51504171, 21875080, 51572100]
  2. HUST Key Interdisciplinary Team Project [2016JCTD101]
  3. Young Science Foundation of The State Key Laboratory of Refractories and Metallurgy of Wuhan University of Science and Technology [2016QN08]
  4. Applied Basic Research Program of Wuhan City [2013011801010598]
  5. Wuhan Yellow Crane Talents Program
  6. Natural Science Foundation of Hubei Province [2015CFA116]
  7. City University of Hong Kong Strategic Research Grant (SRG) [7004644]

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SnSe is a promising anode material in sodium-ion batteries (SIBs) due to its high theoretical capacity (780 mA h g(-1)) and natural abundance. Herein, we report SnSe nanoplates vertically grown on nitrogen-doped carbon (SnSe/NC) with strong Sn-C bonding for high-performance anode in SIBs, which are synthesized by a facial cation-exchange strategy. The vertically grown SnSe nanoplates with large interplanar spacing (0.58 nm), strong electronic coupling of Sn-C bonding between SnSe and NC facilitate the fast electron/ion transfer, enabling high pseudocapacitive Na-ion storage and enhanced power capability. Density functional theory calculations demonstrate that the presence of N heteroatoms in NC matrix has a pivotal influence on the formation of Sn-C bonding to stabilize the SnSe/NC structure. Moreover, the SnSe nanoplates of SnSe/NC exhibits low interlayer Na+ diffusion barrier (0.1 eV) and low energy barrier (0.14 eV/uc) from discharged product to pristine SnSe/NC, implying the fast Na+ diffusion capability and good reversibility. Consequently, the SnSe/NC exhibits large capacities of 723 and 88 mA h g(-1) at 0.025 and 20 A g(-1), respectively, and 82% capacity retention for over 200 cycles at 2 A g(-1), boosting promising applications in high-performance SIBs.

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