Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 9, Issue 1, Pages 308-312Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2018.2874039
Keywords
Cu(ln,Ca)Se-2 (CIGS); electrical potential/field; Kelvin probe force microscopy (KPFM); pn junction location; thin-film solar cell; window layer
Funding
- U.S. Department of Energy (DOE) [DE-AC36-08GO28308]
- U.S. Department of Energy's Office of Energy Efficiency and Renewable Energy under Solar Energy Technologies Office [30296]
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We report on measurements of junction location in Cu(In,Ga)Se-2 (CIGS) solar cells with different window-layer materials by nm-resolution electrical potential/field profiling across the junction using Kelvin probe force microscopy imaging on cross-section of the devices. The results illustrate that the device with a CdS window layer (CdS/CIGS) has a buried homojunction located inside the CIGS absorber with similar to 40-nm junction depth, whereas the ZnOS/CIGS devices with and without partial electrolyte treatment prior to the window-layer deposition are similar, exhibiting a heterointerface junction. This junction location may contribute in part to the highest efficiency of the CdS/CIGS device among the three devices.
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