Journal
ADVANCED OPTICAL MATERIALS
Volume 6, Issue 24, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201801245
Keywords
CsPbBr3; device stability; interface engineering; perovskite light-emitting diodes; surface passivation
Categories
Funding
- National Natural Science Foundation of China [61774154, 51503196, 61704170, 61775211]
- Jilin Province Science and Technology Research Project [20180201029GX, 20170101039JC, 20160520176JH, 20160520092JH]
- Dawn Talent Training Program of CIOMP
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A CsPbBr3-based all-inorganic perovskite light-emitting diode (PeLED) with ultrahigh brightness and enhanced stability is prepared by controlling of morphology and interface engineering. A nonionic surfactant polyoxyethylene (20) sorbitan monolaurate is introduced into the CsPbBr3 film, which induces tightly arranged grains in the perovskite film, thus highly passivating the defects at the grain boundaries, resulting in a performance-enhanced PeLED with a highest brightness of 111 000 cd m(-2), a peak current efficiency (CE) of 21.1 cd A(-1), a maximum external quantum efficiency (EQE) of 5.55%, and an operational lifetime of 4.5 h. The device properties are further improved by adding an anionic surfactant sodium dodecyl benzene sulfonate to modify the hole injection layer poly(ethylenedioxythiophene):polystyrenesulfonate. The hole current density is increased, further balancing the charge injection and transport. Finally, the optimal device displays an ultrahigh brightness of 179 000 cd m(-2), a peak CE of 28.0 cd A(-1), a maximum EQE of 7.39%, and a further prolonged lifetime of 6 h.
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