Journal
AIP ADVANCES
Volume 8, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5045531
Keywords
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Funding
- Chinese National Natural Science Foundation [11374174, 51390471, 51527803, 51701143]
- National 973 Project of China [2015CB654902]
- National Key Research and Development Program [2016YFB0700402]
- Foundation for the Author of National Excellent Doctoral Dissertation [201141]
- National Program for Thousand Young Talents of China
- Tianjin Municipal Education Commission
- Tianjin Municipal Science and Technology Commission
- Fundamental Research Fund of Tianjin University of Technology
- fellowship program for outstanding postdoctoral researchers from China and India in Israeli Universities
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Defects can alter the electronic, magnetic and spintronic properties of single- and few-layer MoS2 which are two-dimensional semiconductors with nonzero bandgaps. Here we discover by first-principles calculations with density functional theory that stacking faults with different rotational angles in bilayer MoS2 quantum dots modulate quantitatively the magnetism of the dots and the distributions of the spins and energy levels in their electronic structures. Our results suggest an avenue to design and tailor MoS2 quantum dots for electronics, optoelectronics, magnetics and spintronics. (C) 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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