4.4 Article

Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity

Journal

AIP ADVANCES
Volume 9, Issue 1, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.5052432

Keywords

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Funding

  1. Swedish Research Council (VR) [2016-00889]
  2. Swedish Governmental Agency for Innovation Systems (VINNOVA) under the Competence Center Program [2016-05190]
  3. Swedish Foundation for Strategic Research (SSF) [FFL12-0181, RIF14-055, EM16-0024]
  4. Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University, Faculty Grant SFO Mat LiU [2009-00971]
  5. Swedish Research Council [2016-00889] Funding Source: Swedish Research Council
  6. Swedish Foundation for Strategic Research (SSF) [FFL12-0181] Funding Source: Swedish Foundation for Strategic Research (SSF)

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Obtaining high quality, wurtzite InN films with p-type conductivity is a challenge, and there is limited information about the photoluminescence (PL) characteristics of such films. In this study, we present a comprehensive PL study and discuss in detail the recombination processes in Mg-doped InN films with varying Mg concentrations. We find that at low Mg-doping of 1x10(18) cm(-3), which yields p-type conductivity, the PL in InN is spatially inhomogeneous. The latter is suggested to be associated with the presence of n-type pockets, displaying photoluminescence at 0.73 eV involving electrons at the Fermi edge above the conduction band edge. Increasing the Mg concentration to 2.9x10(19) cm(-3) in p-type InN yields strong and spatially uniform photoluminescence at 0.62 eV and 0.68 eV visible all the way to room temperature, indicating homogeneous p-type conductivity. An acceptor binding energy of 64 meV is determined for the Mg acceptor. Further increase of the Mg concentration to 1.8x10(20) cm(-3) leads to switching conductivity back to n-type. The PL spectra in this highly doped sample reveal only the emission related to the Mg acceptor (at 0.61 eV). In the low-energy tail of the emission, the multiple peaks observed at 0.54 - 0.58 eV are suggested to originate from recombination of carriers localized at stacking faults. (C) 2019 Author(s).

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