Journal
NPG ASIA MATERIALS
Volume 11, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/s41427-018-0102-x
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Funding
- Basic Research Project of Shanghai Science and Technology Innovation Action [17JC1400300]
- National Natural Science Foundation of China [61674044]
- Program of Shanghai Subject Chief Scientist [17XD1400800]
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The downscaling of commercial one-transistor-one capacitor ferroelectric memory cells is limited by the available signal window for the use of a charge integration readout technique. However, the erasable conducting charged walls that occur in insulating ferroelectrics can be used to read the bipolar domain states. Both out-of-plane and in-plane cell configurations are compared for the next sub-10-nm integration of ferroelectric domain wall memories with high reliability. It is highlighted that a nonvolatile read strategy of domain information within mesa-like cells under the application of a strong in-plane read field can enable a massive crossbar connection to reduce mobile charge accumulation at the walls and crosstalk currents from neighboring cells. The memory has extended application in analog data processing and neural networks.
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