Journal
MATERIALS
Volume 12, Issue 2, Pages -Publisher
MDPI
DOI: 10.3390/ma12020201
Keywords
Si nanosheets; 2D material; passively Q-switched; solid-state laser
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Funding
- Natural Science Foundation of Shandong Province [ZR2017MF031]
- National Natural Science Foundation of China [11704227]
- Scientific Research Foundation of Shandong University of Technology [4041/416033]
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As a newly-developed two-dimensional (2D) material of group-IVA, few-layer silicon (Si) nanosheets were prepared by the liquid phase exfoliation (LPE) method. Its non-linear saturable adsorption property was investigated by 532 and 1064 nm nanosecond lasers. Using Si nanosheets as the saturable absorber (SA), passive Q-switched all-solid-state lasers were demonstrated for the first time. For different laser emissions of Nd3+ at 0.9, 1.06, and 1.34 mu m, the narrowest Q-switched pulse widths were 200.2, 103.7, and 110.4 ns, corresponding to the highest peak powers of 2.76, 2.15, and 1.26 W. The results provide a promising SA for solid-state pulsed lasers and broaden the potential application range of Si nanosheets in ultrafast photonics and optoelectronics.
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