Probing interlayer interactions in WSe2-graphene heterostructures by ultralow-frequency Raman spectroscopy

Interlayer interactions at the heterointerfaces of van der Waals heterostructures (vdWHs), which consist of vertically stacked two-dimensional materials, play important roles in determining their properties. The interlayer interactions are tunable from noncoupling to strong coupling by controlling the twist angle between adjacent layers. However, the influence of stacking sequence and individual component thickness on the properties of vdWHs has rarely been explored. In this work, the influence of the stacking sequence of WSe2 and graphene in vdWHs of graphene-on-WSe2 (graphene/WSe2) or WSe2-on-graphene (WSe2/graphene), as well as their thickness, on their interlayer interaction was systematically investigated by ultralow-frequency (ULF) Raman spectroscopy. A series of ULF breathing modes of WSe2 nanosheets in these vdWHs were observed with frequencies highly dependent on graphene thickness. Interestingly, the ULF breathing modes of WSe2 red-shifted in graphene/WSe2 and WSe2/graphene configurations, and the amount of shift in the former was much larger than that in the latter. In contrast, no obvious ULF shift was observed by varying the twist angle between WSe2 and graphene. This indicates that the interlayer interaction is more sensitive to the stacking sequence compared with the twist angle. The results provide alternative approaches to modulate the interlayer interaction of vdWHs and, thus, tune their optical and optoelectronic properties.