Journal
ADVANCED ENERGY MATERIALS
Volume 9, Issue 9, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.201803367
Keywords
selective contacts; silicon photovoltaics; titanium oxide
Categories
Funding
- Electronic Materials Programs - Office of Science, Office of Basic Energy Sciences, Material Sciences and Engineering Division of the US Department of Energy [DE-AC02-05CH11231]
- Office of Science of the US Department of Energy [DE-SC0004993]
- Office of Science, Office of Basic Energy Sciences, of the US Department of Energy [DE-AC02-05CH11231]
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Over the past five years, there has been a significant increase in both the intensity of research and the performance of crystalline silicon devices which utilize metal compounds to form carrier-selective heterocontacts. Such heterocontacts are less fundamentally limited and have the potential for lower costs compared to the current industry dominating heavily doped, directly metalized contacts. A low temperature (<= 230 degrees C), TiOx /LiFx/Al electron heterocontact is presented here, which achieves m Omega cm(2) scale contact resistivities p(c) on lowly doped n-type substrates. As an extreme demonstration of the potential of this heterocontact, it is trialed in a newly developed, high efficiency n-type solar cell architecture as a partial rear contact (PRC). Despite only contacting approximate to 1% of the rear surface area, an efficiency of greater than 23% is achieved, setting a new benchmark for n-type solar cells featuring undoped PRCs and confirming the unusually low p(c )of the TiOx,/LiFx,/Al contact. Finally, in contrast to previous versions of the n-type undoped PRC cell, the performance of this cell is maintained after annealing at 350-400 degrees C, suggesting its compatibility with conventional surface passivation activation and sintering steps.
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