4.8 Article

Reducing Saturation-Current Density to Realize High-Efficiency Low-Bandgap Mixed Tin-Lead Halide Perovskite Solar Cells

Journal

ADVANCED ENERGY MATERIALS
Volume 9, Issue 3, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.201803135

Keywords

dark saturation current; grain boundary passivation; low-bandgap perovskites; perovskite solar cells

Funding

  1. U.S. Department of Energy (DOE) SunShot Initiative [DE-FOA-0000990]
  2. Office of Naval Research [N00014-17-1-2223]
  3. Air Force Research Laboratory under Space Vehicles Directorate [FA9453-11-C-0253]
  4. Ohio Research Scholar Program
  5. Alliance for Sustainable Energy, LLC [DE-AC36-08-GO28308]
  6. U.S. Department of Energy SunShot Initiative [DE-FOA-0000990]

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The unsatisfactory performance of low-bandgap mixed tin (Sn)-lead (Pb) halide perovskite subcells has been one of the major obstacles hindering the progress of the power conversion efficiencies (PCEs) of all-perovskite tandem solar cells. By analyzing dark-current density and distribution, it is identified that charge recombination at grain boundaries is a key factor limiting the performance of low-bandgap mixed Sn-Pb halide perovskite subcells. It is further found that bromine (Br) incorporation can effectively passivate grain boundaries and lower the dark current density by two-three orders of magnitude. By optimizing the Br concentration, low-bandgap (1.272 eV) mixed Sn-Pb halide perovskite solar cells are fabricated with open-circuit voltage deficits as low as 0.384 V and fill factors as high as 75%. The best-performing device demonstrates a PCE of >19%. The results suggest an important direction for improving the performance of low-bandgap mixed Sn-Pb halide perovskite solar cells.

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