Journal
NATURE COMMUNICATIONS
Volume 9, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/s41467-018-07820-8
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Funding
- research grant for the Development of Converging Measurement Technology for Nanotechnology - Korea Research Institute of Standards and Science [KRISS-2017-GP2017-0019]
- Korea-Hungary joint laboratory program for Nanoscience through the National Research Council of Science and Technology
- Priority Research Center Program through the National Research Foundations of Korea [2010-0020207]
- Basic Science Research Program through the National Research Foundations of Korea [NRF-2017R1D1A1B03035727]
- KIST Institutional Programs through the National Research Foundations of Korea
- Nano Material Technology Development Program through the National Research Foundations of Korea [NRF-2017M3A7B4049167]
- Ministry of Science & ICT (MSIT), Republic of Korea [2Z05410] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Council of Science & Technology (NST), Republic of Korea [GP2018-0017] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2010-0020207, 2017M3A7B4049167, 2017R1D1A1B03035727] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Precise doping-profile engineering in van der Waals heterostructures is a key element to promote optimal device performance in various electrical and optical applications with twodimensional layered materials. Here, we report tungsten diselenide-(WSe2) based pure vertical diodes with atomically defined p-, i- and n-channel regions. Externally modulated p-and n-doped layers are respectively formed on the bottom and the top facets of WSe2 single crystals by direct evaporations of high and low work-function metals platinum and gadolinium, thus forming atomically sharp p-i-n heterojunctions in the homogeneous WSe2 layers. As the number of layers increases, charge transport through the vertical WSe2 p-i-n heterojunctions is characterized by a series of quantum tunneling events; direct tunneling, Fowler-Nordheim tunneling, and Schottky emission tunneling. With optimally selected WSe2 thickness, our vertical heterojunctions show superb diode characteristics of an unprecedentedly high current density and low turn-on voltages while maintaining good current rectification.
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