Simulation of high efficiency SnS-based solar cells with SCAPS

In this paper, we designed, simulated and analyzed high efficiency of SnS-based solar cells. This work is related to the influence of a glancing angle deposition (GLAD) technique for deposition of SnS layer, on the photovoltaic performance of SnS-based solar cells. The photovoltaic parameters have been calculated for the samples prepared at different oblique incident flux angles (alpha = 0 degrees, 45 degrees, 55 degrees, 65 degrees, 75 degrees, and 85 degrees). The best efficiency was found for the sample prepared at alpha = 85 degrees. We simulated the J-V characteristics and showed how the absorber layer that prepared by GLAD technique at different incident flux angles, influence the short-circuit current density (J(oc)), open-circuit voltage (V-oc), fill factor (FF), and efficiency (eta) of solar cell.