Journal
SMALL
Volume 15, Issue 7, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201805431
Keywords
2D materials; charge trapping; heterostructures; near-infrared annihilation; quasiplane nanosheets
Categories
Funding
- National Natural Science Foundation of China [61601305, 61604097, 2157116]
- Science and Technology Innovation Commission of Shenzhen [JCYJ20170818154457845, JCYJ20170302145229928, JCYJ20170302151653768, KQJSCX20170727100433270, JCYJ20150324141711593, KQJSCX20170327150812967]
- Guangdong Provincial Department of Science and Technology [2017TQ04X082]
- Department of Education of Guangdong Province [2016KTSCX120]
Ask authors/readers for more resources
It is desirable to imitate synaptic functionality to break through the memory wall in traditional von Neumann architecture. Modulating heterosynaptic plasticity between pre- and postneurons by another modulatory interneuron ensures the computing system to display more complicated functions. Optoelectronic devices facilitate the inspiration for high-performance artificial heterosynaptic systems. Nevertheless, the utilization of near-infrared (NIR) irradiation to act as a modulatory terminal for heterosynaptic plasticity emulation has not yet been realized. Here, an NIR resistive random access memory (RRAM) is reported, based on quasiplane MoSe2/Bi2Se3 heterostructure in which the anomalous NIR threshold switching and NIR reset operation are realized. Furthermore, it is shown that such an NIR irradiation can be employed as a modulatory terminal to emulate heterosynaptic plasticity. The reconfigurable 2D image recognition is also demonstrated by an RRAM crossbar array. NIR annihilation effect in quasiplane MoSe2/Bi2Se3 nanosheets may open a path toward optical-modulated in-memory computing and artificial retinal prostheses.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available