Journal
SEMICONDUCTORS
Volume 52, Issue 11, Pages 1392-1397Publisher
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063782618110027
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Funding
- government of the Russian Federation [211, 02.A03.21.0006]
- Russian Foundation for Basic Research [16-32-60015, 16-02-00242]
- Russian Science Foundation [14-22-00143]
- Federal Agency of Research Institutions of the Russian Federation [AAAA-A17-11704210141-5]
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The atomic structure and energy spectrum of heterostructures formed in a system of InAs/AlAs binary compounds are studied. The InxAl1 -xSbyAs1 -y alloy, from which quantum wells are formed in InSb/AlAs structures, decomposes into two phases with different compositions. The characteristic dimensions of regions containing separate phases of the alloy in the structure plane are 5-7 nm. Spinodal decomposition of the alloy brings about the formation of coexisting indirect-gap regions with type-I and type-II energy spectra in quantum wells of the heterostructures.
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