Journal
PROGRESS IN PHOTOVOLTAICS
Volume 27, Issue 2, Pages 171-178Publisher
WILEY
DOI: 10.1002/pip.3077
Keywords
chalcopyrite; Cu(In,Ga)Se-2; Cu depletion layer; interface; solar cell
Funding
- New Energy and Industrial Technology Development Organization
- JSPS KAKENHI [17J09890]
- New Energy and Industrial Technology Development Organization (NEDO)
- Grants-in-Aid for Scientific Research [17J09890] Funding Source: KAKEN
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The unintentional formation of a Cu depletion layer (CDL) on the surface of Cu(In,Ga)Se-2 was observed in 1993, and CDLs have been expected to improve the performance of Cu(In,Ga)Se-2 solar cells. However, methods of controlling CDLs have hitherto been unavailable. For the first time, we succeeded in controlling a uniform CDL on a Cu(In,Ga)Se-2 surface by introducing irradiation with Se into the typical three-stage growth process of Cu(In,Ga)Se-2. We discuss the characterization and effects on device performance of CDLs. A uniform, smooth CDL with a thickness of 200 nm was formed at a Se irradiation time of 5 minutes, whereas the CDL formed at an irradiation time of 10 minutes was rough and non-uniform. A maximum efficiency of 19.8% was achieved at an irradiation time of 5 minutes via the formation of a complete CDL. This simple, unique method may help to maximize efficiency of Cu(In,Ga)Se-2 solar cells.
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