Journal
PHYSICS-USPEKHI
Volume 61, Issue 10, Pages 1026-1030Publisher
TURPION LTD
DOI: 10.3367/UFNe.2017.11.038351
Keywords
topological insulators; edge and surface states; photogalvanic effects
Categories
Funding
- Russian Science Foundation [17-12-01265]
- Russian Science Foundation [17-12-01265] Funding Source: Russian Science Foundation
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Integrating the ideas of topology and topological transitions into solid-state physics has led to the theoretical prediction and subsequent experimental discovery of topological insulators, a new class of three- or quasi-two-dimensional dielectric crystalline systems exhibiting stable conducting surface states. This paper briefly reviews the electronic properties of topological insulators. The structure of edge and bulk electronic states in two- and three-dimensional HgTe-based topological insulators is described in particular detail. Recent theoretical and experimental results on the interaction of an electromagnetic field with topological insulators and on edge and surface photogalvanic effects are presented.
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