Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 13, Issue 2, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201800453
Keywords
defects; doping; high performance; memory devices
Funding
- Ministry of Science and Technology of Taiwan [MOST-104-2221-E-006-001, MOST-104-2221-E-168-011-MY3]
- Ministry of Education of Taiwan, R.O.C. [107-N-270-EDU-T-142]
Ask authors/readers for more resources
The bipolar resistive switching behavior of Pt/Mn-doped ZnO/InZnO memory devices is investigated in this study, and evidence has been found that this switching effect is due to defects. X-ray photoelectron spectra indicate that significant amounts of oxygen-vacancy defects are present in the Mn-doped ZnO memory device. Superior bipolar resistive switching behavior has been observed in Mn-doped ZnO memory devices. In contrast, this switching behavior is not present in the undoped ZnO memory device. Based on endurance and retention time measurements, these devices also show excellent reliability and stability, and the enhanced bipolar resistive switching behavior is consistent with changes in oxygen-vacancy concentration. Especially, the resistive switching effect can be attributed to oxygen vacancy conductive filaments is found by depth-profiling XPS spectra. These results clearly illustrate that oxygen vacancies are instrumental to the bipolar resistive switching effect in ZnO-based memory devices. The bipolar resistive switching effect can therefore be attributed to the formation of oxygen-vacancy defect conductive filaments. This study obviously demonstrate that high-performance ZnO-based memory devices can be fabricated by incorporating Mn.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available