Tuning of the defect mode in a 1D superconductor-semiconductor crystal with hydrostatic pressure dependent frequency of the transverse optical phonons

This study aims to investigate a transmittance spectrum in a one-dimensional photonic crystal, which is surrounded by air and composed of alternating layers of a superconductor O and a semiconductor (GaAs), using the transfer matrix and two-fluid models. Herein, we considered the pressure-dependence of the superconductor's critical temperature and the pressure-dependence, in the semiconductor, in both the angular frequency of the transverse optical phonons and the thickness of layers. Initially, we found that increasing the pressure for fixed thickness values of the superconductor results in a shift in the larger frequencies of the transmittance spectrum and the photonic band gaps. With an increase in the thickness of the superconductor layer at a fixed pressure and thickness values of the semiconductor, an increase in the width of the photonic band gaps was observed. When a defective GaAs semiconductor layer was inserted into the structure due to the dissipative features of the semiconductor, a defective mode with a transmittance of less than 1.0 was found inside the photonic band gaps. When the thickness of the superconductor layer was increased, while keeping the pressure and thickness of the semiconductor constant, the defect mode shifted to shorter frequencies. It was also found that the shift and the number of defective modes in the photonic band gaps increase when the thickness of the defective semiconductor layer increases.