Journal
OPTICS EXPRESS
Volume 26, Issue 24, Pages 32118-32129Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.26.032118
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Funding
- Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO) [680-47-628]
- NWO-Philips Industrial Partnership Program NanoPhotonics for Solid State Lighting
- European Research Council (ERC) [259272, 665619]
- European Research Council (ERC) [665619] Funding Source: European Research Council (ERC)
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We demonstrate a novel method for measuring terahertz (THz) photoconductivity of semiconductors on length scales smaller than the diffraction limit at THz frequencies. This method is based on a near-field microscope that measures the transmission of a THz pulse through the semiconductor following photoexcitation by an ultrafast laser pulse. Combining back-excitation of the sample using a Dove prism, and a dual lock-in detection scheme, our microscope design offers a flexible platform for near-field time-resolved THz time-domain spectroscopy, using fluences available to typical laser oscillators. Experimental results on a thin film of gallium arsenide grown by metal organic chemical vapor deposition are presented as a proof-of-concept, demonstrating the ability to map the complex conductivity as well as sub-ps dynamics of photoexcited carriers with a resolution of lambda/10 at 0.5 THz. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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