Journal
ACS NANO
Volume 10, Issue 2, Pages 1948-1953Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b05831
Keywords
molybdenum disulfide; MoS2; 3R stacking; Raman spectroscopy; HR-TEM
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Funding
- National Research Foundation (NRF) - Korean government (MSIP) [2011-0017605, 2015R1A2A2A01006992]
- Center for Advanced Soft Electronics under the Global Frontier Research Program of MSIP [2011-0031630]
- National Research Foundation of Korea [2011-0017605, 2015R1A2A2A01006992] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Since the stacking order sensitively affects various physical properties of layered materials, accurate determination of the stacking order is important for studying the basic properties of these materials as well as for device applications. Because 2H-molybdenum disulfide (MoS2) is most common in nature, most studies so far have focused on 2H-MoS2. However, we found that the 2H, 3R, and mixed stacking sequences exist in few-layer MoS2 exfoliated from natural molybdenite crystals. The crystal structures are confirmed by HR-TEM measurements. The Raman signatures of different polytypes are investigated by using three different excitation energies that are nonresonant and resonant with A and C excitons, respectively. The low-frequency breathing and shear modes show distinct differences for each polytype, whereas the high-frequency intralayer modes show little difference. For resonant excitations at 1.96 and 2.81 eV, distinct features are observed that enable determination of the stacking order.
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