Journal
ACS NANO
Volume 10, Issue 1, Pages 1481-1492Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b07020
Keywords
resistive switching strontium ruthenate; tantalum oxide; scanning tunneling microscopy; electric field effect
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Funding
- National Science Foundation through MIT Center of Materials Science and Engineering MRSEC [DMR-1419807]
- BMBF [03X0140]
- DFG [SFB 917]
- Initiative and Networking Fund of the German Helmholtz Association, Helmholtz Virtual Institute [VH-VI-442 MEMRIOX]
- W2/W3 program of the Helmholtz Association
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The local electronic properties of tantalum oxide (TaOx, 2 <= x <= 2.5) and strontium ruthenate (SrRuO3) thin-film surfaces were studied under the influence of electric fields induced by a scanning tunneling microscope (STM) tip. The switching between different redox states in both oxides is achieved without the need for physical electrical contact by controlling the magnitude and polarity of the applied voltage between the'STM tip and the sample surface. We demonstrate for Ta0 films that two switching mechanisms operate. Reduced tantalum oxide shows resistive switching due to, the formation of metallic Ta, but partial oxidation of the samples changes the switching mechanism to one mediated mainly by oxygen vacancies. For SrRuO3, we found that the switching mechanism depends on the polarity of the applied voltage and involves formation, annihilation, and migration of oxygen vacancies. Although TaOx and SrRuO3 differ significantly in their electronic and structural properties, the resistive switching mechanisms could be elaborated based on STM measurements, proving the general capability of this method for studying resistive switching phenomena in different classes of transition metal oxides.
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